EE 432/532 Semiconductor Fabrication G. Tuttle

Oxidation practice problems
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Read the Oxidation example calculations class notes.


A (100)-oriented silicon wafer has an intial oxide thickness of 125 nm.

The wafer will be oxidized at a temperature of 1050°C using dry oxidation.

How long should the oxidation last so that the final thickness of the oxide will be 205 nm?

Answer