EE 432/532 Semiconductor Fabrication G. Tuttle

Ion Implantation practice problems
Refresh the page to get a new problem.

Read the Ion implantation class notes.


Boron is implanted into a silicon wafer that has a background doping of 1x1014 cm–3.

The implant energy is 400 keV, and the implant dose is 8.0e+12 cm-2. (See the notes for range and straggle plots.)

There is no anneal following the implant.

Determine the peak concentration and the junction depth(s) of the implanted profile.

Answer