Diffusion practice problems
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Read the Diffusion example calculations class notes.

Boron is diffused into a silicon wafer using a constant-source (erfc) process. The process parameters are:

• temperature: T = 1050°C, and
• time: t = 2.83 hr.

The wafer has a constant background doping of N_B = 3x10¹⁶ cm^–3.

The surface concentration during the diffusion is determined by the solid-solubility limit.
For this diffusion use N_s = 1x10²⁰ cm^–3.

Determine the diffused dose and the junction depth at the end of the diffusion.

Link to error-function table, if needed.

Answer