Diffusion practice problems
Refresh the page to get a new problem.

Read the Diffusion example calculations class notes.

Boron is diffused into a silicon wafer using a two-step process. The process parameters are:

• deposition temperature: T₁ = 800°C
• deposition time: t₁ = 2 hr
• drive temperature: T₂ = 1100°C
• drive time: t₂ = 2.17 hr.

The wafer has a constant background doping of N_B = 8x10¹⁶ cm^–3.

The surface concentration during the depositon step is determined by the solid-solubility limit.
For this diffusion use N_s = 1x10²⁰ cm^–3.

Answer