pn-junction electrostatics practice problems
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A GaAs p-n junction is uniformly doped with n-type ND = 2.0e+14 cm-3 on one side and p-type doping NA 6.0e+15 cm-3 on the other.
Find the following at room temperature:
- the built-in potential
- the total depletion-layer width at zero bias
- the depletion widths on the n- and p-sides
- the maximum magnitude of the electric field
- the capacitance at zero-bias
Note: For GaAs,
- the relative permittivity is εr = 13
- the intrinsic carrier concentration is ni = 2.100e+6 cm-3
- the conduction band density-of-states is NC = 4.300e+17 cm-3
- the valence band density-of-states is NV = 8.000e+18 cm-3
- the band gap energy is EG = 1.420 eV.