pn-junction current practice problems
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A uniformly doped GaAs p-n junction has n-type doping of 4.0e+15 cm^-3 and p-type doping of 3.0e+16 cm^-3.

The width of the n-type quasi-neutral region is 7 μm, and the width of the p-type quasi-neutral region is 4 μm.

The diode area is 400 μm x 400 μm.

The applied voltage is 0.4 V.

Calculate the diode current at room temperature:

Note: For GaAs,

• the intrinsic carrier concentration is n_i = 2.100e+6 cm^-3
• the electron diffusion coefficient is 180 cm²/s, and
• the hole diffusion coefficient is 10 cm²/s.

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