EE 436 Physics of Transistors G. Tuttle

BJT practice problems
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An ideal, uniformly doped silicon npn transistor has the following doping and widths.

NPN emitter base collector
doping NDE = 3.0e+19 cm-3 NAB = 6.0e+17 cm-3 NDC = 4.62e+16 cm-3
widths WE = 3 μm WB = 2.5 μm WC = 5 μm

The BJT area is 200 μm x 200 μm.

Calculate βF and IS for the BJT.

If the BJT is biased in forward active operation, with VBE = 0.75 V, calculate the base, collector, and emitter currents, assuming room temperature operation.

Note: For silicon,


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