BJT practice problems
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An ideal, uniformly doped silicon npn transistor has the following doping and widths.
| NPN | emitter | base | collector |
| doping | NDE = 4.0e+17 cm-3 | NAB = 8.0e+15 cm-3 | NDC = 1.33e+15 cm-3 |
| widths | WE = 2.5 μm | WB = 1 μm | WC = 8 μm |
The BJT area is 400 μm x 400 μm.
Calculate βF and IS for the BJT.
If the BJT is biased in forward active operation, with VBE = 0.8 V, calculate the base, collector, and emitter currents, assuming room temperature operation.
Note: For silicon,
- the intrinsic carrier concentration is ni = 6.0e+9 cm-3
- the electron diffusion coefficient is 35 cm2/s, and
- the hole diffusion coefficient is 10 cm2/s.